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RClamp2504N & RCLAMP3304N
PROTECTION PRODUCTS - RailClamp Description
A RailClamp is a low capacitance TVS array designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and Lightning. The unique design incorporates surge rated, low capacitance steering diodes and a TVS diode in a single package. During transient conditions, the steering diodes direct the transient current to ground. The internal TVS diode clamps the transient voltage to a safe level. The low capacitance array configuration allows the user to protect up to four high-speed data lines. The RClampTM3304N and RClampTM2504N are constructed using Semtech's proprietary EPD process technology. The EPD process provides low stand-off voltages with significant reductions in leakage current and capacitance over silicon-avalanche diode processes. They feature a true operating voltage of 2.5 volts and 3.3 volts for superior protection. These devices are in a 10-pin, RoHS/WEEE compliant, SLP2626P10 package. It measures 2.6 x 2.6 x 0.60mm. The leads are spaced at a pitch of 0.5mm and are finished with lead-free NiPdAu. The high surge capability (Ipp=25A, tp=8/20s) means it can be used in high threat environments in applications such as Gigabit Ethernet, telecommunication lines, and digital video.
RailClamp 2.5V & 3.3V TVS Arrays
Features
Transient protection for high-speed data lines to IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 25A (8/20s) Array of surge rated diodes with internal TVS Diode Small package saves board space Protects up to four I/O lines Low capacitance (<5pF) for high-speed interfaces Low leakage current and clamping voltage Low operating voltage: 2.5V and 3.3V Solid-state silicon-avalanche technology
Mechanical Characteristics
SLP2626P10 10L package RoHS/WEEE Compliant Nominal Dimensions: 2.6 x 2.6 x 0.60 mm Lead Finish: NiPdAu Molding compound flammability rating: UL 94V-0 Marking : Marking Code + Date Code Packaging : Tape and Reel
Applications
USB 2.0 10/100/1000 Ethernet Digital Visual Interface (DVI) T1/E1 Secondary Protection T3/E3 Secondary Protection Analog Video
Circuit Diagram
Package Configuration
2.60
12 C L
Pin 5
C 2.60 L
Pin 1 Pin 9 Pin 3 Pin 7
0.50 BSC
Gnd
0.60
Revision 01/15/2008
1
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RClamp2504N & RCLAMP3304N
PROTECTION PRODUCTS Absolute Maximum Rating
R ating Peak Pulse Power (tp = 8/20s) Peak Pulse Current (tp = 8/20s) ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) Op erating Temp erature Storage Temp erature Symbol Pp k IP P VESD TJ TSTG Value 450 25 25 15 -55 to +125 -55 to +150 Units Watts A kV C C
Electrical Characteristics (T=25oC)
R Clamp2504N Parameter Reverse Stand-Off Voltage Punch-Through Voltage Snap -Back Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbol VRWM V PT VSB IR VC VC VC Cj IPT = 2A ISB = 50mA VRWM = 2.5V, T=25C IPP = 1A, tp = 8/20s IPP = 10A, tp = 8/20s IPP = 25A, tp = 8/20s Between I/O p ins and Ground VR = 0V, f = 1MHz Between I/O p ins VR = 0V, f = 1MHz 3.8 2.0 2.7 2.0 0.5 4.5 7.5 15 5 Conditions Minimum Typical Maximum 2.5 Units V V V A V V V pF pF
Note 1: I/O pins are pin 1, 3, 7, and 9
2008 Semtech Corp.
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RClamp2504N & RCLAMP3304N
PROTECTION PRODUCTS
R Clamp3304N Parameter Reverse Stand-Off Voltage Punch-Through Voltage Snap -Back Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbol VRWM V PT VSB IR VC VC VC Cj IPT = 5A ISB = 50mA VRWM = 3.3V, T=25C IPP = 1A, tp = 8/20s IPP = 10A, tp = 8/20s IPP = 25A, tp = 8/20s Between I/O p ins and Ground VR = 0V, f = 1MHz Between I/O p ins VR = 0V, f = 1MHz 3.8 2.0 3.5 2.8 5 5.5 10.5 18 5 Conditions Minimum Typical Maximum 3.3 Units V V V A V V V pF pF
2008 Semtech Corp.
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RClamp2504N & RCLAMP3304N
PROTECTION PRODUCTS Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
110 100 90 80 70 60 50 40 30 20 10 0
Power Derating Curve
Peak Pulse Power - PPP (kW)
1
0.1
0.01 0.1 1 10 Pulse Duration - tp (us) 100 1000
% of Rated Power or IPP
0
25
50
75
100
125
150
Ambient Temperature - TA (oC)
Pulse Waveform
110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 Time (s) 20 25 30 td = IPP/2
PP
Normalized Junction Capacitance vs. Reverse Voltage
Waveform Parameters: tr = 8s td = 20s
CJ(VR) / CJ(VR=0)
1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 Reverse Voltage - VR (V)
f = 1 MHz
Percent of I
e
-t
Clamping Voltage vs. Peak Pulse Current I/O to GND
20 25
Clamping Voltage vs. Peak Pulse Current I/O to I/O
Clamping Voltage - VC (V)
Clamping Voltage - VC (V)
15
20
RCLAMP3304N
RCLAMP3304N
15
10
10
RClamp2504N
5
RClamp2504N
Waveform Parameters: tr = 8s td = 20s 20 25
5
Waveform Parameters: tr = 8s td = 20s 0 5 10 15 20 25
0 0 5 10 15 Peak Pulse Current - IPP (A)
0 Peak Pulse Current - IPP (A)
2008 Semtech Corp.
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RClamp2504N & RCLAMP3304N
PROTECTION PRODUCTS Typical Characteristics
Insertion Loss S21 (I/O to Ground)
CH1 S21 LOG 6 dB / REF 0 dB 1: -1.0230 dB 800 MHz 0 dB
12
ESD Clamping (8kV Contact per IEC 61000-4-2)
2: -1.1051 dB 900 MHz
3 4
-6 dB -12 dB -18 dB -24 dB -30 dB -36 dB -42 dB -48 dB 1 MHz START. MHz 10 MHz 100 MHz
3: -2.0922 dB 1.8 GHz 4: -3.0779 dB 2.5 GHz 5: -4.5358 dB 2.7 GHz
3 1 GHz GHz STOP 3000. 000000 MHz
Note: Data is taken with a 10x attenuator
2008 Semtech Corp.
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RClamp2504N & RCLAMP3304N
PROTECTION PRODUCTS Applications Information
Device Connection Options for Protection of Four High-Speed Data Lines These devices are designed to protect low voltage data lines operating at 2.5 volts or 3.3 volts. When the voltage on the protected line exceeds the reference voltage the steering diodes are forward biased, conducting the transient current away from the sensitive circuitry. Data lines are connected at pins 1, 3, 7 and 9. The center pin should be connected directly to a ground plane. The path length is kept as short as possible to minimize parasitic inductance. Pins 2, 4, 6, 8, and 10 are not connected. Note that pin 5 is connected internally to the cathode of the low voltage TVS. It is not recommended that these pins be directly connected to a DC source greater than the snap-back votlage (VSB) as the device can latch on as described below. EPD TVS Characteristics These devices are constructed using Semtech's proprietary EPD technology. By utilizing the EPD technology, the RClamp2504N and RCLAMP3304N can effectively operate at 2.5V and 3.3V respectively while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. When the TVS is conducting current, it will exhibit a slight "snap-back" or negative resistance characteristics due to its structure. This point is
2008 Semtech Corp.
Circuit Diagram
Pin 5
Pin 1
Pin 9
Pin 3
Pin 7
Gnd
1. Configuration (Top View) Figure 1 . Pin Conf iguration (Top Side Vie w)
1 2 3 4 5 GND
10 9 8 7 6
Pin 1, 3, 7, 9 2, 4, 6, 8, 10 5 Center Tab
Identification Input/Output Lines N o Connect N o Connect (Do not connect this pin to a DC supply) Ground
defined on the curve by the snap-back voltage (VSB) and snap-back current (ISB). To return to a nonconducting state, the current through the device must fall below the ISB (approximately <50mA) and the voltage must fall below the VSB (normally 2.8 volts for a 3.3V device). If a 3.3V TVS is connected to 3.3V DC source, it will never fall below the snap-back voltage of 2.8V and will therefore stay in a conducting state.
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RClamp2504N & RCLAMP3304N
PROTECTION PRODUCTS Applications Information
RClamp2504N
12
RClamp2504N
Gigabit Ethernet Transceiver
12
RClamp2504N
12
RClamp2504N
12
Schematic Diagram for Gigabit Ethernet Telcordia GR-1089 Intra-Building Protection (PHY Operating Temp <= 90C)
1 2 3 4 5
10 9 8 7 6
RClamp2504N
1 2 3 4 5
10 9 8 7 6
RClamp2504N
Schematic Diagram for Gigabit Ethernet ESD Protection
2008 Semtech Corp.
7
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RClamp2504N & RCLAMP3304N
PROTECTION PRODUCTS Applications Information - Spice Model
RClamp2504N Spice Model
R Clamp2504N Spice Parameters Parameter IS BV VJ RS IB V CJO TT M N EG Unit Amp Volt Volt Ohm Amp Farad sec --eV D1 (LCR D) 1E-20 100 0.63 0.138 1E-3 1.5E-12 2.541E-9 0.01 1.1 1.11 D2 (LCR D) 1E-20 100 0.59 0.241 1E-3 1.5E-12 2.541E-9 0.01 1.1 1.11 D3 (T VS) 1.66E-13 2.89 0.53 0.06 1E-3 288E-12 2.541E-9 0.17 1.1 1.11
2008 Semtech Corp.
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RClamp2504N & RCLAMP3304N
PROTECTION PRODUCTS Applications Information - Spice Model
RCLAMP3304N Spice Model
R Clamp3304N Spice Parameters Parameter IS BV VJ RS IB V CJO TT M N EG Unit Amp Volt Volt Ohm Amp Farad sec --eV D1 (LCR D) 1E-20 100 0.62 0.138 1E-3 1.5E-12 2.541E-9 0.01 1.1 1.11 D2 (LCR D) 1E-20 100 0.59 0.241 1E-3 1.5E-12 2.541E-9 0.01 1.1 1.11 D3 (T VS) 1.66E-13 3.55 0.6 0.182 1E-3 253E-12 2.541E-9 0.205 1.1 1.11
2008 Semtech Corp.
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RClamp2504N & RCLAMP3304N
PROTECTION PRODUCTS Outline Drawing - SLP2626P10
A D B
DIM
PIN 1 INDICATOR (LASER MARK)
E
A aaa C A2 D1 C 12L E/2 C L E1 LxN e N bxN D/2 bbb A1 C
SEATING PLANE
A A1 A2 b D D1 E E1 e L N aaa bbb
DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .020 .024 .026 0.50 0.60 0.65 .000 .001 .002 0.00 0.03 0.05 (.007) (0.17) .007 .010 .012 0.20 0.25 0.30 .098 .102 .106 2.50 2.60 2.70 .079 .085 .089 2.00 2.15 2.25 .098 .102 .106 2.50 2.60 2.70 .044 .050 .054 1.11 1.26 1.36 .020 BSC 0.50 BSC .011 .014 .016 0.30 0.35 0.40 10 10 .003 0.08 .004 0.10
CAB
NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.
Land Pattern - SLP2626P10
P
X
Z
G
F
(C)
DIM B C F G P X Y Z
DIMENSIONS INCHES MILLIMETERS .081 2.05 .100 2.50 .050 1.26 .073 1.85 .020 0.50 .012 0.30 .025 0.65 .124 3.15
Y
B
NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET.
2008 Semtech Corp.
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RClamp2504N & RCLAMP3304N
PROTECTION PRODUCTS Marking Ordering Information
Part Number RClamp2504N .TCT RCLAMP3304N .TCT
RClamp2504N YYWW = Date Code RCLAMP3304N RailClamp and RClamp are marks of Semtech Corporation
2504N
YYWW
3304N
YYWW
Working Voltage 2.5 Volts 3.3 Volts
Qty per Reel 3,000 3,000
R eel Size 7 Inch 7 Inch
Tape and Reel Specification
Pin 1 Location
User Direction of feed
Device Orientation in Tape
A0 2.77 +/-0.05 mm B0 2.77 +/-0.05 mm K0 0.80 +/-0.05 mm
Tape Width
B, (Max)
D
D1
E
F
K (MAX)
P
P0
P2
T(MAX)
W 8.0 mm + 0.3 mm - 0.1 mm
8 mm
4.2 mm (.165)
1.5 + 0.1 mm - 0.0 mm
1.0 mm 0.05
1.750.10 mm
3.50.05 mm
2.4 mm
4.00.1 mm
4.00.1 mm
2.00.05 mm
0.4 mm
Contact Information
Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804
2008 Semtech Corp. 11 www.semtech.com

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